Curing light

ABSTRACT

A curing light system useful for curing light activated composite materials is disclosed. Various configurations of light emitting semiconductor chips and heat sinks are disclosed, as well as various structures and methods for driving, controlling and using them.

CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This patent application is a continuation-in-part of Ser. Nos.10/016,992; 10/017,272; 10/017,454; and 10/017,455; each of which wasfiled on Dec. 13, 2001, and each of which is a continuation-in-part ofU.S. patent application Ser. No. 09/405,373 filed on Sep. 24, 1999, nowU.S. Pat. No. 6,331,111, and priority is claimed thereto. Priority isalso claimed to U.S. Provisional Patent Application Serial No.60/304,324 filed on Jul. 10, 2001.

BACKGROUND OF THE INVENTION

[0002] The inventions relate to the field of curing lights that may beused to cure light activated composite materials. More particularly, theinventions relate to curing lights of various configurations that usesemiconductor light sources to provide light of a wavelength and powerlevel desired to effect curing. In many fields, composite materials,such as monomers and an initiator, are cured into durable polymers byuse of a light source of appropriate wavelength to excite the initiatorinto initiating polymerization, and sufficient power to carrypolymerization through to adequate completion.

[0003] In the prior art, various light sources have been used for thepurpose of curing composite materials. Halogen bulbs, fluorescent bulbs,xenon bulbs, and plasma-arc lights have been used. More recently, therehave been some efforts to produce an effective curing light using lightemitting diodes (LED's), but those efforts have not met with widespreadacceptance in the marketplace.

[0004] The prior art described above suffers from several disadvantages.First, many of those prior art lights generate a wide spectrum of lightrather than light just of the desired wavelength for composite curing.Consequently, those prior art lights generate unnecessary heat. Second,many of those prior art lights require light transfer systems such as alight guide or fiber, which many embodiments of the present inventionomit, providing a smaller and more efficient unit. Third, many of theprior art systems require an elaborate cooling system to handle heat,creating a large, heavy and expensive curing light. Many embodiments ofthe invention use a unique heat sink structure that avoids the need forcomplicated, noisy and expensive cooling systems. Many embodiments ofthe invention use a semiconductor light source and package whichprovides high power light for use in curing composite materials.Additional points of difference between the inventions and the prior artwill become apparent upon reading the text below in conjunction with theappended drawings.

SUMMARY OF INVENTION

[0005] It is an object of some embodiments of the invention to provide acuring light system that uses a semiconductor light source to producelight capable of curing composite materials. Curing composite materialswill involve polymerizing monomers into durable polymers. Variousphysical, electrical and semiconductor structures, materials and methodsare provided to achieve this object. Additional objects, features andadvantages of the invention will become apparent to those skilled in theart upon reading the specification and reviewing the appended drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

[0006]FIG. 1 depicts a battery-powered Curing light that uses a singlelight emitting diode chip as a light source.

[0007]FIG. 2 depicts a cross-section of the light of FIG. 1.

[0008]FIG. 3 depicts an AC-powered Curing light that uses a single lightemitting diode chip as a light source.

[0009]FIG. 4 depicts a cross section of the light of FIG. 3.

[0010]FIG. 5 depicts a battery-powered curing light that uses two lightemitting diode chips as a light source.

[0011]FIG. 6 depicts a cross-section of the light of FIG. 5.

[0012]FIG. 7 depicts an AC-powered curing light that uses two lightemitting diode chips as a light source.

[0013]FIG. 8 depicts a cross-section of the light of FIG. 7.

[0014]FIG. 9 depicts a battery-powered curing light that uses threelight emitting diode chips as a light source.

[0015]FIG. 10 depicts a cross-section of the light of FIG. 9.

[0016]FIG. 11 depicts an AC-powered curing light that uses three lightemitting diode chips as a light source.

[0017]FIG. 12 depicts a cross section of the light of FIG. 11.

[0018]FIG. 13 depicts a battery-powered curing light that uses three ormore semiconductor chip modules mounted on a heat sink in a manner thatthe light they emit is collected by a reflector apparatus and focused bya lens means onto a light transport mechanism, such as a light guide,plastic stack or fiber.

[0019]FIG. 14 depicts a cross-section of the light of FIG. 13.

[0020]FIG. 15 depicts an alternative embodiment of the light of FIG. 13,in the light transport mechanism is replace by a distally-located mirrorwhich reflects generally coherent light emitted from the light source ina desired direction for use.

[0021]FIG. 16a depicts a light which uses a plurality of light emittingsemiconductor modules mounted on a heat sink as a light source, afocusing means to produce a generally coherent beam of light, and alight transport means such as optically conductive cable fortransporting light to a location remote from the light source for use.

[0022]FIG. 16b depicts a cross section of the light of FIG. 16a.

[0023]FIG. 17a depicts a gross cross section of a light emitting diodechip that uses an insulative substrate.

[0024]FIG. 17b depicts a gross cross section of a light emitting diodechip that uses a conductive substrate.

[0025]FIG. 18a depicts epitaxial layers of a light emitting diode chipthat uses an insulative substrate.

[0026]FIG. 18b depicts epitaxial layers of a light emitting diode chipthat uses a conductive substrate.

[0027]FIG. 19a depicts a top view of a light emitting diode chip array(single chip) with an insulative substrate.

[0028]FIG. 19b depicts a top view of a top view of a light emittingdiode chip array (single chip) with a conductive substrate.

[0029]FIG. 20a depicts a side view of a chip package for a lightemitting chip that shows a light emitting diode chip with an insulativesubstrate mounted in a well of a heat sink, with electrical connectionsand light emission shown.

[0030]FIG. 20b depicts a perspective view of a chip package for a lightemitting chip with an insulative substrate that shows a chip arraymounted in a well of a heat sink.

[0031]FIG. 21a depicts a side view of a chip package for a lightemitting chip that shows a light emitting diode chip with a conductivesubstrate mounted in a well of a heat sink, with electrical connectionsand light emission shown.

[0032]FIG. 21b depicts a perspective view of a chip package for a lightemitting chip with a conductive substrate that shows a chip arraymounted in a well of a heat sink.

[0033]FIG. 22a depicts a side view of a chip package for a lightemitting chip mounted in a well of a heat sink according to theso-called ‘flip chip’ design, the chip having an insulative substrate.

[0034]FIG. 22b depicts a side view of a flip chip mounted on a flip chippad.

[0035]FIG. 22c depicts a perspective view of a flip chip pad.

[0036]FIG. 22d depicts a perspective view of the chip package of FIG.22a.

[0037]FIG. 23 depicts a side view of a flip chip package with aconductive susbtrate.

[0038]FIG. 24a depicts a side view of a light emitting diode chippackage including the chip (insulative substrate) and heat sink surfacemount arrangement with a protective dome, lens or cover.

[0039]FIG. 24b depicts a side view of a light emitting diode chippackage including the chip (conductive substrate) and heat sink surfacemount arrangement with a protective dome, lens or cover.

[0040]FIG. 25a depicts an array of light emitting chips with insulativesubstrates in surface mount arrangement in a single well of a heat sink.

[0041]FIG. 25b depicts a perspective view of the array ofsurface-mounted chips of FIG. 25a.

[0042]FIG. 26a depicts an array of light emitting chips with conductivesubstrates in surface mount arrangement in a single well of a heat sink.

[0043]FIG. 26b depicts a perspective view of the array ofsurface-mounted chips of FIG. 26a.

[0044]FIG. 27a depicts an array of light emitting chips with insulativesubstrates in surface mount arrangement in individual sub-wells of awell of a heat sink.

[0045]FIG. 27b depicts a perspective view of the array ofsurface-mounted chips of FIG. 27a.

[0046]FIG. 28a depicts an array of light emitting chips with conductivesubstrates in surface mount arrangement in individual sub-wells of awell of a heat sink.

[0047]FIG. 28b depicts a perspective view of the array ofsurface-mounted chips of FIG. 28a.

[0048]FIG. 29a depicts a light emitting surface mount chip packageincluding array of chips, heat sink and protective dome, lens or coveraccording to the chip and surface mount configuration of FIG. 25a above.

[0049]FIG. 29b depicts a light emitting surface mount chip packageincluding array of chips, heat sink and protective dome, lens or coveraccording to the chip and surface mount configuration of FIG. 26a above.

[0050]FIG. 30a depicts a light emitting surface mount chip packageincluding array of chips in sub-wells, heat sink and protective dome,lens or cover according to the chip and surface mount configuration ofFIG. 27a above.

[0051]FIG. 30b depicts a light emitting surface mount chip packageincluding array of chips in sub-wells, heat sink and protective dome,lens or cover according to the chip and surface mount configuration ofFIG. 28a above.

[0052]FIG. 31a depicts a side view of a single surface mount lightemitting diode chip mounted to an elongate heat sink in a manner suchthat light from the chip is emitted at generally a 90 degree angle tothe longitudinal axis of the elongate heat sink.

[0053]FIG. 31b depicts a bottom view of the device of FIG. 31a.

[0054]FIG. 32a depicts a cross-sectional side view of an elongate heatsink having two light emitting semiconductor chips in surface mountconfiguration in an angled orientation in order to present overlappinglight beams for an enhanced density light footprint.

[0055]FIG. 32b depicts a bottom view of the device of FIG. 32a.

[0056]FIG. 33a depicts a cross-sectional side view of an elongate heatsink having three light emitting semiconductor chips mounted on it in anangled orientation in order to present overlapping light beams for anenhanced density light footprint.

[0057]FIG. 33b depicts a bottom view of the device of FIG. 33a.

[0058]FIG. 33c depicts a bottom view of the heat sink of FIGS. 33a and33 b to permit the reader to understand the angular orientation of thelight emitting semiconductor chips.

[0059]FIG. 33d depicts a side view of the heat sink for 3 surfacemounted LED's.

[0060]FIG. 34a depicts a light shield which may be used in conjunctionwith curing lights of the invention to shield human eyes from lightemitting by the curing light.

[0061]FIG. 34b depicts a focus lens which may be used to focus lightemitted by curing lights of the invention in order to present a denserlight footprint.

[0062]FIG. 34c depicts a light module with reflective cone installed.

[0063]FIG. 34d depicts a reflective cone.

[0064]FIG. 35 depicts a block diagram of control circuitry that may beused with the embodiments of the inventions that utilize AC power.

[0065]FIG. 36 depicts by a block diagram of control circuitry that maybe used with the embodiments of the inventions that utilize batterypower.

[0066]FIG. 37 depicts a graph of electrical current input I to the lightemitting semiconductor chip(s) of the curing light versus time in apulsed power input scheme in order to enhance light power output fromthe chip(s) and in order to avoid light intensity dimunition due to theheat effect.

[0067]FIG. 38 depicts a graph of total light intensity output versustime in order to permit the reader to compare light intensity outputwhen a current input pulsing scheme such as that of FIG. 37 is used to atraditional continuous wave current input approach which generates aheat effect is used.

DETAILED DESCRIPTION

[0068] The inventions include various embodiments of curing lightsystems useful for curing light activated composite materials,principally by polymerizing monomers into durable polymers. The inventedcuring light systems have application in a variety of fields, includingbut not limited to medicine and dentistry where composite materials witha photoinitiator are used. The photoinitiator absorbs light of aparticular wavelength and causes polymerization of the monomers intopolymers.

[0069] Composite materials are applied to a surface and later cured by avariety of methods. One method includes use of a photoinitiator ormultiple photoinitiators in the composite material. After the compositematerial has been placed in a desired location, light of a wavelengththat activates the photoinitiator is applied to the composite. The lightactivates the photoinitiator and initiates curing of the compositematerial. In order to effect complete curing, the light must be of awavelength to which the photoinitiator is sensitive, the light must beof a power level that will cause curing, and the light must be appliedto the composite material for a sufficient duration of time. Althoughthe light used to activate the photoinitiator must be of a wavelength towhich a photoinitiator is sensitive, the light can come from a varietyof sources, including gas lasers solid state lasers, laser diodes, lightemitting diodes, plasma-arc lights, xenon-arc lights, and conventionallamps. In the present inventions, light is produced from a variety ofdifferent semiconductor chips arranged in numerous configurations.

[0070]FIG. 1 depicts a battery-powered curing light 100 that uses asingle light emitting diode chip as a light source. FIG. 2 depicts across-section of the light 100 of FIG. 1. The portable curing lightsystem 100 includes a light source module 102 which generates light of adesired wavelength or multiple wavelengths for activating aphotoinitiator or multiple photoinitiators and initiating curing of alight activated composite material. The light source module 102 has alight shield 103 for blocking light generated by the light emittingsemiconductor chip(s) 150 from reaching human eyes and skin. Theapparatus 103 could also be configured as a lens or focusing cone formodifying the footprint of light emitted by the curing light. The lightemitting semiconductor chip(s) 150 are located at the distal end of thecuring light, and at the distal end of the light source module 102. Thechip(s) 150 are oriented to emit light at generally a right angle withthe longitudinal axis of the light source module or the longitudinalaxis of the curing light handpiece, although chips could be mounted toemit light at from about a 45 degree angle to about a 135 degree anglewith the longitudinal axis of the light source module, heat sink, orhandpiece as desired. The curing light system 100 includes a housing 104for containing and protecting electronic circuits and a DC battery pack.In some embodiments, the light emitting semiconductor chip(s) may bepowered by from less than about 25 milliamps to more than about 2 ampsof electrical current. Many embodiments of the inventions will havechip(s) powered from about 350 milliamps to about 1.2 amps of current.Higher power embodiments of the inventions will often use more thanabout 100 milliamps of current.

[0071] A switch 105 a is provided on the top of the housing 104 facing adirection opposite from the direction that light would be emitted fromthe light source module 103. A second switch 105 b is provided on theside of the housing. The switches 105 a and 105 b are devices such as abutton or trigger for turning the light emission of the curing light onand off. A timer 106 is provided to control the duration of time thatthe curing light emits a beam of light. Control buttons to set andadjust the timer are depicted as 151 a and 151 b.

[0072] An audible indicator or beeper may be provided in someembodiments of the invention to indicate when light emission from thecuring light begins and ends. A first light emitting diode indicatorlamp 107 is located on the housing in a visible location in order toindicate to the user low battery power. A second light emitting diodeindicator lamp 108 is located on the housing in a visible location inorder to indicate to the user that the battery is being charged. A mainon/off switch to the curing light 160 is provided at the rear orproximal end of the housing. A wavelength selector may be provided insome embodiments of the invention so that the user may select thewavelength of light that he wishes to emit from the curing light,depending on the wavelength sensitivity of the photoinitiator in thecomposite material that he is using. The user may also select acombination of two or more wavelengths of light to be emitted togetherin some embodiments of the invention.

[0073] A separate battery charger module 109 is included in order toreceive AC power from a traditional wall socket and provide DC power tothe curing light system for both charging the batteries and powering thelight source and control circuitry when the batteries if desired. Thebattery charger module 109 has a cable 109 a and a plug 109 b forplugging into a receptacle or connector 170 on the proximal end of thecuring light housing 104. The battery charger module 109 includescircuitry 109 c for controlling battery charging of batteries 166.

[0074] The light module 102 has a casing 161 that encases an elongateheat sink 162. The casing 161 is separated from the heat sink 162 by abuffer layer 163 such as insulation tape and an air space may beprovided therebetween for heat dissipation. Electrically conductivewires 164 to power the light-emitting semiconductor chip(s) 150.Internally, we can see that the heat sink 162 is an elongate and curvedstructure which positions a semiconductor chip at its end in aconvenient place for use without a light guide. At the distal end of theheat sink 162, there may be a smaller primary heat sink or semiconductorchip module which includes a smaller primary heat sink. A semiconductormodule may be covered by a protective cover or dome or a focus lens. Theheat sink 162 may be an elongate structure or other shape as desired.Use of an elongate heat sink 162 rapidly transfer heat away from thechip(s) 150 for heat dissipation. If heat transfer and dissipation arenot handled adequately, damage to the chip(s) 150 may result, or lightoutput of the chip(2) 150 may be diminished.

[0075] The light source module 102 is removable from the housing 104 andinterfaces therewith and mounts thereto by a connection plug 165. One ormore batteries 166 are provided to power the curing light during use.The curing light may have control circuitry 167 located in the housing102. Battery charger 109 c is located in the power supply 109 forcontrolling battery recharging and direct powering of the curing lightfrom wall outlet power when the batteries are low. The power supply 109has an AC plug 109 d.

[0076] A unique advantage of the curing light system depicted in severalembodiments of the invention is that all components, including the lightsource, batteries, control circuitry and user interface are convenientlylocated in or on a handpiece. This results in a very portable, yetcompact and easy to use curing light system. Only when the batteries arebeing charged would the user need to have a cord attached to the curinglight system or even be in the vicinity of AC power. However, the lightsystem can be operated using power from a battery charger when thebattery pack is being charged or when no batteries are being used.

[0077]FIG. 3 depicts an AC-powered curing light that uses a single lightemitting diode chip as a light source. FIG. 4 depicts a cross section ofthe light of FIG. 3. Referring to these figures, one embodiment of acuring light system 301 of the invention is depicted. The curing lightsystem 301 includes a handpiece or wand 302, cabling 303, and a powersupply 304 with an AC plug 304 a. Curing light control circuitry 304 bmay be located within the power supply 304 and is remote from the wand302 in order to keep the wand compact and light weight. The handpiece orwand 302 has minimum size, weight and componentry for convenience ofuse. The handpiece 302 includes a housing 305, an on/off switch or lightoutput control 306, an integral light source module 307, and a device309 which may be a light shield, light reflective cone or focus lens.The handpiece 302 receives electrical power from cabling 303. A cablestrain relief device 308 may be provided. A timer 310 may be providedwith timer adjustment buttons 311 and 312 in order to control timedduration of light output from the curing light. All control circuitry304 b is located in a module remote from the handpiece 302.

[0078] Referring to the cross section of FIG. 4, it can be seen that theheat sink 401 may be configured as an elongate device with a planarmounting platform on its distal end for mounting chips or chip modulesthereto. The heat sink has a longitudinal axis, and the light emittingsemiconductor chip(s) may be oriented at an angle with the longitudinalaxis of the heat sink from about 45 to about 135 degrees. In someembodiments of the invention, the chips will be oriented to emit lightat an angle with the heat sink longitudinal axis of 70 to 110 degrees,80 to 100 degrees, or about 90 degrees. The heat sink distal end may becurved as desired to position a light emitting semiconductor device 401thereon to be positioned in a location for convenient use. Thesemiconductor device 402 may be covered with a protective window, domeor focus lens 403. The heat sink may occupy less than 50% of the lengthof the wand, more than 50% of the length of the wand, 60% of the lengthof the wand, 70% of the length of the wand, 80% of the length of thewand, 90% of the length of the wand, or up to 100% of the length of thewand. Electrical wire 404 provides power to the light emittingsemiconductor device 402. Insulation means 405 such as rubber insulatorsor insulation tape separate the heat sink 401 from the casing 305 andprovide for airspace 406 therebetween for ventilation and heatdissipation.

[0079]FIG. 5 depicts a battery-powered curing light 501 that uses twolight emitting diode chips as a light source. FIG. 6 depicts across-section of the light 501 of FIG. 5. The curing light 501 includesa housing or casing 502 for containing and protecting the curing lightcomponents. A series of vents 503 are provided in the housing 502 topermit heat to escape therefrom and to permit air circulation therein.At the distal end of the housing 502, a light module 504 is provided.The light module 504 may include an angled tip and may be removable andreplaceable with other light modules of differing characteristics asdesired. A light shield, light reflective cone or focus lens 505 isprovided at the distal end of the light module 504. At the proximal endof the curing light 501, a handle 506 is provided for grasping thecuring light. An on-off switch or trigger 507 is provided on the distalside of the curing light handle 506 for effecting light emission. On theproximal side of the curing light handle 506, a main switch 507 forpowering up the curing light 501 is located. A timer 509 with timeradjustment buttons 510 and 511 is provided to time the duration of lightoutput. Indicator lights 512 and 513 are provided to indicate lowbattery and battery charging. A battery charger module 520 is providedwith a power supply 521, cable 522 and plug 523. The plug fits intoreceptacle 601 for charging the battery 602 of the curing light 501.

[0080] Referring to FIG. 6, Light module 504 includes a casing 603 thatcontains an elongate heat sink 604 that is separated from the casing 603by insulators 605 to form a ventilating and heat-dissipating air space606 therebetween. Heat sink 604 may include a thermoelectric coolermaterial 608 thereon for enhanced heat dissipation. Electrical wires 607power a pair of light emitting semiconductor devices or modules 609 aand 609 b. The semiconductor devices 609 a and 609 b are mounted on theheat sink 604 at a mounting receptacle 611 that has two adjacent angledplanes oriented to cause the light output beams from the semiconductordevices 609 a and 609 b to overlap to provide an overlapped and enhancedintensity light footprint 610. The mounting planes are oriented at anangle of from about 10 to about 180 degrees with respect to each other.The curing light 501 also includes a timer 509 with timer controlbuttons 621 and 622, and electronic control circuitry 623. A batterypack 602 is located inside casing 502 to provide operating power. Thelight module 504 is connected to housing 502 using an electrical plug624. The light module 504 can therefore be unplugged and replaced withanother light module of different power characteristics or which emits adifferent wavelength of light for different usage applications.

[0081]FIG. 7 depicts an AC-powered curing light 701 that uses two lightemitting diode chips as a light source. FIG. 8 depicts a cross-sectionof the light 701 of FIG. 7. The curing light system 701 includes ahandpiece or wand 702, cabling 703, and a power supply 704 with an ACplug 704 a. Control circuitry 704 b is located within the power supply704 and is remote from the wand 702 in order to keep the wand compactand light weight. The handpiece or wand 702 has minimum size, weight andcomponentry for convenience of use. The handpiece 702 includes a housing705, an on/off switch or light output control 706, an integral lightsource module 707, and a light shield 709. The handpiece 702 receiveselectrical power from cabling 703. A cable strain relief device 708 maybe provided. A timer 710 may be provided with timer adjustment buttons711 and 712 in order to control timed duration of light output from thecuring light. All control circuitry 704 b is located in a module remotefrom the handpiece 702. Referring to the cross section of FIG. 8, it canbe seen that the heat sink 801 may be configured as an elongate devicewith a longitudinal axis shared with the longitudinal axis of the wand.The light emitting semiconductor chip 802 and 803 are mounted to theheat sink 801 at an acute angle to each other in order to produce anoverlapping and enhanced intensity light footprint. The heat sink distalend may be curved as desired to position the light emittingsemiconductor devices thereon for convenient use. The semiconductordevices 803 and 803 may be covered by a protective window, dome or focuslens. The heat sink may occupy less than 50% of the length of the wand,more than 50% of the length of the wand, 60% of the length of the wand,70% of the length of the wand, 80% of the length of the wand, 90% of thelength of the wand, or up to 100% of the length of the wand. Electricalwire 804 provides power to the light emitting semiconductor devices 802and 803. Insulation means 805 such as rubber insulators or insulationtape separate the heat sink 801 from the casing 705 and provide forairspace 806 therebetween for ventilation and heat dissipation. Aconnection plug 810 is provided for connecting the power module to thecuring light. Thermoelectric cooler material 820 is optionally providedon the heat sink for enhanced cooling.

[0082]FIG. 9 depicts a battery-powered curing light 901 that uses threelight emitting diode chips or modules as a light source. FIG. 10 depictsa cross-section of the light 901 of FIG. 9. The componentry of thiscuring light is as generally described previously except for its threelight emitting diode light source structure. It uses three lightemitting diode chips or chip modules 902 a, 902 b and 902 c arranged incomplementary angled configuration so that the light beams emitted byeach overlap at a desired distance from the light source to form anoverlapped and enhanced intensity light footprint 903. The arrangementof 3 LED's is described elsewhere in this document.

[0083]FIG. 11 depicts an AC-powered curing light 1101 that uses threelight emitting diode chips or modules as a light source. FIG. 12 depictsa cross-section of the light 1101 of FIG. 11. The componentry of thiscuring light is as generally described previously except for its threelight emitting diode light source structure. It uses three lightemitting diode chips or chip modules 1102 a, 1102 b and 1102 c arrangedin complementary angled configuration so that the light beams emitted byeach overlap at a desired distance from the light source to form anoverlapped and enhanced intensity light footprint 1103.

[0084]FIG. 13 depicts a battery-powered curing 1301 light that uses aplurality of semiconductor chip modules mounted on a heat sink in amanner that the light they emit is collected by a reflector apparatusand focused by a lens means onto a light transport mechanism, such as alight guide, plastic stack or fiber 1302. FIG. 14 depicts across-section of the light 1301 of FIG. 13. Many of the components ofthis light are as discussed previously for other curing lightembodiments, and that discussion is not repeated here. However, thelight source and light transport means are very different fromembodiments discussed above. The curing light 1301 includes a housing1303 which has a light transport means 1302 such as a light guide,plastic stack or fiber attached to it. The light transport means 1302transports light from a light module to a remote location for use. Thelight transport means 1302 depicted has a curved distal portion 1304 tocause light 1305 to be emitted in a desired direction, such as at aright angle to the longitudinal axis of the curing light or the lighttransport means. The light transport means may be removable andreplaceable with light guides of different lengths and configurations. Agross or secondary heat sink 1405 is provided for heat removal from thesystem. The secondary heat sink 1405 has a proximal side on which athermoelectric material layer 1406 may be placed to enhance heat removalability. Optionally, a fan 1407 may be provided to improve heat removalefficiency, and vents may be provided in the housing to encourage aircirculation. The secondary heat sink 1405 may have mounted directly orindirectly to it a plurality of semiconductor light emitting chips orchip modules 1409. Those chips 1409 may be mounted to a primary heatsink such as 1410. Light emitted by the chips 1409 will be reflected bya reflector device 1411 such as a mirrored parabolic reflector to anoptional lens or focusing device 1412 which focuses a generally coherentlight beam onto the light transport means 1302. The reflector may be ofa desired shape for directing light, such as frusto-conical, parabolicor otherwise. If the light emitting devices are oriented so that thelight which they emit is substantially directed toward the distal end ofthe curing light, the reflector may be omitted. A battery pack 1415 andcontrol circuitry 1413 are provided.

[0085]FIG. 15 depicts an alternative embodiment of the light of FIG. 13.The curing light 1501 has no light transport mechanism and instead has alight exit tube 1502 that has a distal end with a mirror or reflector1504 which can reflect a generally coherent light beam 1503 to a lightexit 1505 in a desired direction for use, such as at a generally rightangle to the longitudinal axis of the light module or the curing light.

[0086]FIG. 16a depicts a curing light curing light 1601 that has a lightsource and control module 1602 remotely located from a handpiece 1603connected by a connection means 1604 that includes an opticallyconductive cable and electrical wires for electrical connection. FIG.16b depicts a cross section of the light of FIG. 16a. The light sourceand control module 1602 includes a housing 1610 with optional air ventsthereon, electronic control circuitry 1611, an electrical cord withpower plug 1612, a cooling fan 1613 for air circulation and heatdissipation, a heat sink 1615 which may be appropriately shaped toaccept light emitting semiconductor devices on its distal side, such ashaving a concave hemispherical or parabolic portion, and having athermoelectric cooler 1616 on its proximal side for enhanced heatdissipation. A plurality of light emitting semiconductor devices such asLED chip modules 1618 are mounted to the heat sink distal side so thatthey emit light into an optical system such as a focus lens 1619 whichplaces a generally coherent light beam onto the optically conductivecable where it is transported to a distant handpiece 1603 that includesa housing 1651, light exit 1650 for permitting light to be delivered toa composite material to be cured, and various controls such as lighton/off control 1660, timer display 1663, and timer adjustment buttons1661 and 1662. The distal end of the handpiece housing 1670 may beangled from the longitudinal axis of the handpiece in for convenience oflight application to a composite material. The remote light sourceemployed by the light in FIGS. 16a and 16 b permit a larger and veryhigh power light source, such as one which provides 800 mw/cm² to 2000mw/cm² output from the handpiece.

[0087] As desired in various embodiments of the inventions, the lightsource may be a single LED chip, single LED chip array, an array of LEDchips, a single diode laser chip, an array of diode laser chips, a VCSELchip or array, or one or more LED or diode laser modules. The wavelengthof light emitted from the semiconductor light source can be any desiredwavelength or combination of different wavelength, depending on thesensitivity of the photoinitiator(s) in the composite material to becured. Any of the semiconductor and heat sink arrangements describedherein may be used to construct desired curing lights.

[0088] Referring to FIG. 17a, a light emitting diode (“LED”) chip 1701is depicted in which the LED structure 1702 has been grown on top of oron one side of an insulative substrate 1703. Electrodes 1704 a and 1704b are provided to power the LED. In such a structure, all electrodeswill be located on the top surface of the LED. Light is emitted from allsides of the LED as depicted.

[0089] A similar LED chip 1710 with a conductive substrate 1711 andaccompanying LED structure 1712 and electrodes 1713 and 1714 is depictedin FIG. 17b.

[0090]FIG. 18a depicts an example of epitaxial layer configuration 1801for an LED with an insulative substrate used in the invention. The LEDincludes an electrically insulative substrate such as sapphire 1802. Thesubstrate serves as a carrier, pad or platform on which to grow thechip's epitaxial layers. The first layer placed on the substrate 1802 isa buffer layer 1803, in this case a GaN buffer layer. Use of a bufferlayer reduces defects in the chip which would otherwise arise due todifferences in material properties between the epitaxial layers and thesubstrate. Then a contact layer 1804, such as n-GaN, is provided. Acladding layer 1805 such as n-AlGaN Sub is then provided. Then an activelayer 1806 is provided, such as InGaN multiple quantum wells. The activelayer is where electrons jump from a conduction band to valance and emitenergy which converts to light. On the active layer 1806, anothercladding layer 1807, such as p-AlGaN is provided that also serves toconfine electrons. A contact layer 1808 such as p+ GaN is provided thatis doped for Ohmic contact. The contact layer 1808 has a positiveelectrode 1809 mounted on it. The contact layer 1804 has a negativeelectrode 1810.

[0091]FIG. 18b depicts epitaxial layer configuration 1850 for an LEDwith a conductive substrate. The LED includes an electrically conductivesubstrate such as SiC 1852 that has an electrode 1851 on it. Thesubstrate serves as a carrier, pad or platform on which to grow thechip's epitaxial layers, and as a negative electrode in the chip. Thefirst layer placed on the substrate 1852 is a buffer layer 1853, such asn-GaN. A cladding layer 1854 such as n-AlGaN is provided followed by anactive layer 1855 such as InGaN with multiple quantum wells. That isfollowed by a cladding layer 1856 such as p-AlGaN and finally a contactlayer 1857 such as p+ GaN that has an electrode 1858 mounted on it.

[0092]FIG. 19a depicts a top view of an LED array on a single chip 1901with a size a×b on an insulating substrate. The size of a and b are eachgreater than 300 micrometers. Semiconductor materials 1904 are locatedon an electrically insulative substrate (not shown). Positive andnegative electrode pads are provided, each in electrical connection withits respective metal electrode strip 1902 and 1903 arranged in a row andcolumn formation (8 columns shown) to create the array and power thechip. This structure enables the LED to emit light of greater power thanthat which is possible in a non-array traditional chip.

[0093]FIG. 19b depicts a top view of an LED array on a single chip 1950with a size a×b on a conductive substrate. Each of sizes a and b isgreater than 300 micrometers. Semiconductor materials 1952 are locatedon an electrically conductive substrate (not shown). Positive electrodepads are provided in electrical connection with a metal strip 1951arranged in an array formation to power the chip. The substrate servesas the negative electrode in the embodiment depicted.

[0094] Referring to FIG. 20a, a side view of a surface mount LED chippackage 2000 including the LED chip 2001 on a heat sink 2002 isprovided. The LED chip depicted has an insulating substrate and ismounted in a well 2004 of the heat sink 2002 by the use of heatconductive and light reflective adhesive 2003. Light is emitted by thechip in all directions, and light which is emitted toward the adhesive2003 or the well walls is reflected outward in a useful direction 2020.The chip is electrically connected via wires 2010 a, 2010 b, 2010 c and2010 d using intermediary islands 2011 and 2012. The LED chip is locatedin a circular well 2004 of the heat sink 2002. The circular well isformed with sides or walls at about a 45 degree angle or other desiredangle (such as from about 170 to about 10 degrees) so that light emittedfrom the side of the chip will be reflected from the walls of the wellin a desired direction as indicated by arrows in the figure. This allowsthe highest possible light intensity to be obtained using a chip ofgiven size. The well walls may have a light reflective coating toincrease efficiency.

[0095] Referring to FIG. 20b, a perspective view of a LED chip array(single chip) chip package 2050 including the chip array 2051 on aninsulative substrate in a well 2052 of a heat sink 2053 is depicted.

[0096] Referring to FIG. 21a, a side view of an LED chip module 2100 isprovided. An LED chip 2101 with a conductive substrate is mounted in acircular well 2103 of a heat sink 2104 by use of heat conductive lightreflective adhesive 2102. A negative electrode 2110 is provided on theheat sink. Positive electrical connection is provided by wires 2105 and2106, and island 2107.

[0097] Referring to FIG. 21b, a chip array package 2150 that includes anLED chip array 2151 with a conductive substrate mounted in a well 2152of a heat sink 2153 with an electrode 2154 and wire connection 2155 isdepicted.

[0098]FIG. 22a depicts a side view of a chip package 2200 for a lightemitting diode chip array 2201 mounted in a well 2202 of a heat sink2203 according to the so-called ‘flip chip’ design, the chip having aninsulative substrate. FIG. 22b depicts a side view of a flip chip 2201mounted on a flip chip pad 2204. FIG. 22c depicts a perspective view ofa flip chip pad 2204. FIG. 22d depicts a perspective view of the chippackage 2200 of FIG. 22a. Intermediate islands or electrode pads 2201 aand 2210 b are provided on the flip chip pad to ease of electricalconnection with the chip. Electrode bumps 2111 a and 2111 b are providedbetween the chip and the pad for electrical connection. The chip has anelectrode 2201 b on top and its epitaxial layers 2201 a facing downtoward the pad 2204 and the bottom of the well 2202. The pad 2204 uppersurface is light reflective so that light is reflected from the pad in auseful direction. The pad 2204 may be coated with a light reflectivefilm, such as Au, Al or Ag. In such a package, all of the light emittedfrom the chip can be reflected back in the light exit direction forhighest light output.

[0099]FIG. 23 depicts a flip chip package 2301 in which a chip 2302 witha conductive substrate is mounted upside down (electrode up) on a flipchip pad 2303 with light reflective and heat conductive adhesive 2304 inthe well of a heat sink. Electrical connection takes advantage of theexposed electrode of the chip 2302.

[0100] Referring to FIG. 24a, a high power LED package 2401 is depictedusing a chip 2402 with an insulative substrate mounted in the well of aheat sink 2403 using heat conductive and light reflective adhesive 2404.The heat sink is surrounded by a known insulating material 2405 thatserves the purpose of protecting electrode and dome connections. Thewalls and bottom of the well may be polished to be light reflective, ormay be covered, plated, painted or bonded with a light-reflectivecoating such as Al, Au, Ag, Zn, Cu, Pt, chrome, other metals, plating,plastic and others to reflect light and thereby improve light sourceefficiency. Electrodes and/or connection blocks are provided forelectrical connection of the chip. An optical dome or cover 2410 mayoptionally be provided for the purpose of protecting the chip and itsassemblies, and for the purpose of focusing light emitted by the chip.The dome may be made of any of the following materials: plastic,polycarbonate, epoxy, glass and other suitable materials. Theconfiguration of the well and the dome provide for light emission alongan arc of a circle defined by φ. FIG. 24b depicts a similar arrangementfor a chip package 2450 in which the chip 2454 has a conductivesubstrate and thus when mounted to the heat sink 2452 can use anelectrode 2455 on the heat sink itself for electrical connection.Protective dome 2451 and insulating covering 2453 are provided.

[0101] Referring to FIGS. 25a and 25 b, a chip package 2501 is providedwith an array of light emitting semiconductor chips 2504 a, 2504 b, etc.having electrically insulative substrates located in a single well 2502of a heat sink 2503. The chips are mounted by an electrically conductiveand heat conductive adhesive 2605. The chips are electrically connectedto each other by wires 2505 a, 2505 b, etc.

[0102] Referring to FIGS. 26a and 26 b, a chip package 2601 is providedthat has a heat sink 2602 with a single well 2603 and an array of LEDchips 2604 a, 2604 b, etc. in the well 2603. The chips have electricallyconductive substrates and an electrode 2606 is provided on the heatsink.

[0103] Referring to FIG. 27a, a chip package 2701 is depicted with anarray of LED chips 2702 a, 2702 b, 2702 c, etc. is depicted, with eachchip located in its own individual sub-well 2703 a, 2703 b, 2703 c in agross well 2704 of a heat sink 2705. The chips have electricallyinsulative substrates.

[0104] Referring to FIG. 27b, a chip package 2750 is depicted that hasan array of LED chips 2763 a, 2763 b, 2763 c with electricallyconductive substrates. Each LED chip is mounted in its own individualsub-well, all located within a gross well 2761 of a heat sink 2762.

[0105]FIGS. 28a and 28 b depict a chip package 2801 that has a heat sink2802 with a gross well 2803 and a plurality of sub-wells 2804 therein,each sub-well having a light emitting chip 2805 with a conductivesubstrate within it. The heat sink 2803 has a negative electrode 2806for electrical connection.

[0106] Referring to FIG. 29a, an LED chip module 2901 is depicted thathas an array of LED chips 2902 a, 2902 b, etc located in a well 2903 ofa heat sink 2904. Insulative covering 2910 as well as a cover or dome2911 are provided respectively. The chips of FIG. 29a have insulativesubstrates.

[0107] Referring to FIG. 29b, an LED chip module 2950 is depicted thathas an array of LED chips 2951 a, 2951 b, etc. located in a well 2955 ofa heat sink 2954. insulative covering 2960 as well as a cover or dome2961 are provided respectively. The chips of FIG. 29b have conductivesubstrates and an electrode 2959 is provided on the heat sink.

[0108] Referring to FIG. 30a, an LED chip module 3001 is depicted thathas an array of LED chips 3002, with each chip in a sub-well 3003 of agross well 3006 of a heat sink 3005 and the entire module covered by aprotective or focus dome 3012. The chips have electrically insulativesubstrates.

[0109] Referring to FIG. 30b, an LED chip module 3050 is depicted thathas an array of LED chips 3051, with each chip in a sub-well 3052 of agross well 3055 of a heat sink 3054 and the entire module covered by aprotective or focus dome 3061. The chips have electrically conductivesubstrates and there is an electrode 3056 on the heat sink.

[0110] Referring to FIGS. 31a and 31 b, side and bottom views of asurface mount chip configuration are depicted for mounting a single LED3100 or LED module (as described previously) to an elongate heat sink3101. Electrically conductive wires 3102 a and 3102 b and electrodes3103 a and 3103 b are provided for powering the LED. The LED is mountedon a platform 3104 formed on the heat sink distal end. Mounting isachieved by use of light reflective and heat conductive adhesive 3105. Acover or focus dome 3106 is provided over the LED. The heat sink has alongitudinal axis, and the LED is mounted so that the average beam oflight that it emits is generally at a 45 to 135 degree angle with thataxis, and in some instances at a right angle to it.

[0111]FIGS. 32a and 32 b depict side and bottom views of an elongateheat sink 3201 having two light emitting semiconductor chips or modules3202 and 3203 mounted on mounting platforms 3204 a and 3204 b usingadhesive 3205 a and 3505 b (such as heat conductive or light reflectiveadhesive). The chips are mounted on the heat sink in an angledorientation with respect to each other in order to present overlappinglight beams for an enhanced density light footprint 3204. The angle oforientation of the chips is depicted as θ which can be from zero to 180degrees, or from 30 to 150 degrees, or from 45 to 135 degrees, or from70 to 110 degrees, or from 80 to 100 degrees or about 90 degrees, asdesired. The chips are offset from each other by a desired distance ‘a’,which can range from zero to any desired distance. Wires and electrodesare provided to power the LED's. An optional thermoelectric cooler 3208may be provided to enhance heat removal.

[0112]FIG. 33a depicts a cross-sectional side view of a light modulethat uses three light emitting chips or chip modules. FIG. 33b depicts abottom view of the same. FIG. 33c depicts a bottom view of the heat sinkand mounting platform arrangement. FIG. 33d depicts a side view of theheat sink and mounting platform arrangement. An elongate heat sink 3301is provided having three light emitting semiconductor chips or modules3302, 3303, and 3304 mounted on mounting platforms in an angledorientation with respect to each other in order to present overlappinglight beams for an enhanced density light footprint 3306. The mountingplatforms depicted are generally planar and are arranged to present thedensest useful light footprint. The modules may each include their ownprimary heat sink. The modules or chips may be mounted to the elongateheat sink using a heat conductive or light reflective adhesive asdesired. Electrical wires and electrodes are used to power the chips ormodules. An optional thermoelectric cooler 3308 may be provided. Themounting platforms 3305 a, 3305 b and 3305 c can be seen more clearly inFIGS. 33c and 33 d. The mounting platforms depicted are arranged incircular fashion at an angular offset with respect to each other, whichin this case is 120 degrees. More mounting platforms could be used, andany desired arrangement of the mounting platforms could be accommodated.In FIG. 33d it can be seen that the mounting platforms 3305 a, 3305 band 3305 c are arranged at an angle φ with the longitudinal axis of theheat sink 3301. The angle φ can be from 0 to 90 degrees, from 10 to 80degrees, from 20 to 70 degrees, from 30 to 60 degrees, from 40 to 50degrees, or about 45 degrees as desired to generate the densest usablelight footprint.

[0113]FIG. 34a depicts a light shield 3401 which may be used inconjunction with curing lights of the invention to shield human eyesfrom light emitting by the curing light. The light shield includes anorifice 3403 through which light from a curing light may pass, thereceptacle 3403 being formed by the light shield body 3402. A flare 3404of the shield performs most of the protective function.

[0114]FIG. 34b depicts a focus lens 3402 which may be used to focuslight emitted by curing lights of the invention in order to present adenser light footprint. The focus lens has an outer periphery 3405, alight entrance side 3506 and a light exit 3507. The focus lens may bedesigned according to known optical principles to focus light outputfrom chips which may not be in an optimal pattern for use in curing.

[0115]FIG. 34c depicts a reflection cone 3408 in conjunction with LEDmodule 3409, which is mounted on a heat sink 3910 by using heatconductive adhesive 3411. One or more connection wires 3412 may beprovided to power the LED module 3409. The purpose of the lightreflective cone is to re-shape the light beam from the LED module tocreate a light footprint of desired size and density. The inner wall ofthe cone 3408 may be coated with a highly reflective material, such asthe reflective materials mentioned elsewhere in this document. The lightbeam from the LED module will change its path and configuration due tobeing reflected by the cone 3408.

[0116] A detailed depiction of the light reflective cone 3408 isprovided in FIG. 34d, which illustrates a cross-sectional view of thecone. An opening with an appropriate diameter “a” is provided at theproximal side of the cone for fitting to a light module of a curinglight. The diameter “a” is chosen as an appropriate size for permittinglight to enter therein. The cone has a total length “b”. Adjacent lightentrance at “a”, a cylindrical portion of the cone is provided having alongitudinal length “c”. Following cylindrical portion “c”, there is afrusto-conical section of the cone interior having a length “b” minus“c”. A light exit is provided at the end of the cone opposite the lightinlet. The light exit has a diameter “d”, where in many embodiments ofthe invention, “d” will be smaller than “a”. The exterior diameter ofthe cone at its point of attachment to a light module is “e”, where “e”is greater than “a”. As desired, the various dimensions of the cone aswell as its basic geometry (such as conical, frusto-conical,cylindrical, parabolic, etc.) are selected to achieve a desired lightfootprint size and density. Preferably, at least some portion of theinterior surfaces of the reflective cone will have the ability toreflect light to aid in increasing the density of a light footprint.Appropriate reflective surfaces are mentioned elsewhere herein. Exampledimensions of the various portions of the reflective cone in oneembodiment of the invention are as follow: a=from about 5 mm to about 8mm; b=from about 5 mm to about 8 mm; c=from about 2 mm to about 3 mm;d=from about 4 mm to about 6 mm; e=from about 8 mm to about 10 mm.Actual structure and dimensions of a reflective cone or reflectiveattachment or light exit for a curing light may vary depending onproduct type and application and design choice.

[0117]FIG. 35 depicts a logic diagram 3501 of circuitry that may be usedby AC-powered versions of the invented curing lights. AC power input3502 is provided to a power switch source 3503 which outputs DC power toa main switch 3504. Main switch 3504 powers the control circuit 3505 andthe optional TE cooler 3506 if so equipped. Main switch 3504 alsoprovides a constant current source 3507 for the timer 3508, timer setup3511, timer activation switch 3572 and optional light output beeper3513. Constant current source 3507 also powers the light source 3509 toaccomplish light output 3510.

[0118] Referring to FIG. 36, a logic diagram 3601 of circuitry that maybe used by battery-powered versions of the invented curing lights isdepicted. AC power input 3602 is provided to a power switch source 3603which outputs DC power to a battery charge unit 3604 that chargesbattery 3605. The battery 3605 powers main switch 3507. Main switch 3607powers the control circuit 3608 that controls the optional TE cooler3610 and the fan 3609. Main switch 3607 also provides a constant currentsource 3611 for the timer 3613, timer setup 3614, timer activationswitch 3615 and optional light output beeper 3616. Constant currentsource 3611 also powers the light source 3612 to accomplish lightoutput. An electrical voltage booster 3617 may be provided to increasethe voltage from the battery to meet electrical requirements of thelight source.

[0119] Referring to FIG. 37, a graph of electrical current input I tothe light emitting semiconductor chip(s) of the curing light versus timein a pulsed power input scheme is depicted. FIG. 38 depicts a graph oftotal light intensity output versus time in order to permit the readerto compare light intensity output when a current input pulsing schemesuch as that of FIG. 37 is used to a traditional continuous wave currentinput approach which generates a heat effect is used. A pulsed currentinput scheme may be used in order to enhance light power output from thechip(s) and in order to avoid light intensity reduction due to the heateffect. It has been found that when operated in continuous wave mode,the heat effect or heat buildup in the light emitting semiconductorchips will cause a decrease in light output intensity over time, until astabilized light output yield is reached 3802 at point in time 3803. Incontrast, when current input to the semiconductor light source ispulsed, a greater even level of light power output with greaterintensity is achieved 3801. Laboratory experiments have shown thisincrease “d” to be more than 20% in some embodiments of the inventions,providing significantly increased light yield and stable light intensityoutput in exchange for a simple control modification. Each of the squarewaves in FIG. 37 is a pulse of current input to the semiconductor lightsource, measured by “a=duration”, “b=rest period”, and “c=current inputlevel (amps.)”. These criteria can be adjusted depending on the curingenvironment, or pulsed current input to the light source could beomitted in favor of continuous wave current input. It has also beenfound that pulsed power output from the light (not shown in the figures)may be desirable in some circumstances. Pulsed power output from thelight can avoid overloading photoinitiators in the material to be curedwith photons, and permitting them to initiate polymerization of acomposite material in a stable fashion.

[0120] Examples of some heat sink materials which may be used in theinvention include copper, aluminum, silicon carbide, boron nitridenatural diamond, monocrystalline diamond, polycrystalline diamond,polycrystalline diamond compacts, diamond deposited through chemicalvapor deposition and diamond deposited through physical vapordeposition. Any materials with adequate heat conductance can be used.

[0121] Examples of heat conductive adhesives which may be used aresilver based epoxy, other epoxies, and other adhesives with a heatconductive quality. In order to perform a heat conductive function, itis important that the adhesive possess the following characteristics:(i) strong bonding between the materials being bonded, (ii) adequateheat conductance, (iii) electrically insulative or electricallyconductive as desired (or both), and (iv) light reflective as desired,or any combination of the above. Examples of light reflective adhesiveswhich may be used include silver and aluminum based epoxy.

[0122] Examples of substrates on which the semiconductors used in theinvention may be grown include Si, GaAs, GaN, InP, sapphire, SiC, GaSb,InAs and others. These may be used for both electrically insulative andelectrically conductive substrates.

[0123] Materials which may be used to used as a thermoelectric cooler inthe invention include known semiconductor junction devices.

[0124] The semiconductor light source of the invention should emit lightof a wavelength suitable to activate photoinitiators in the compositematerial to be cured.

[0125] Heat sinks used in this invention can be of a variety of shapesand dimensions, such as those depicted in the drawings or any otherswhich are useful for the structure of the particular light source beingconstructed. It should be noted that particular advantage has been foundwhen attaching the semiconductor light source to a small primary heatsink, and then the small primary heat sink is attached to an elongatesecondary heat sink to draw heat away from the semiconductor and awayfrom the patient's mouth.

[0126] While the present invention has been described and illustrated inconjunction with a number of specific embodiments, those skilled in theart will appreciate that variations and modifications may be madewithout departing from the principles of the invention as hereinillustrated, described, and claimed.

[0127] The present invention may be embodied in other specific formswithout departing from its spirit or essential characteristics. Thedescribed embodiments are to be considered in all respects as onlyillustrative, and not restrictive. The scope of the invention is,therefore, indicated by the appended claims, rather than by theforegoing description. All changes which come within the meaning andrange of equivalency of the claims are to be embraced within theirscope.

1. A curing light comprising: a primary heat sink capable of dissipatingheat created by a semiconductor light source, a well in said heat sink,said well being sized to receive a semiconductor chip capable ofproducing light that is useful in curing light-curable materials, a topopening of said well, a bottom of said well, a wall of said well, saidwall of said well being capable of reflecting light, a semiconductorchip capable of producing light that is useful in curing light-curablematerials, said semiconductor chip having a substrate, saidsemiconductor chip having a plurality of epitaxial layers, at least oneof said epitaxial layers being an active layer.
 2. A curing light asrecited in claim 1 wherein said substrate is selected from the groupconsisting of Si, GaAs, GaN, InP, sapphire, SiC, GaSb, and InAs.
 3. Acuring light as recited in claim 1 wherein at least some of saidepitaxial layers are selected from the group consisting of contactlayers, cladding layers, active layers, and buffer layers.
 4. A curinglight as recited in claim 1 wherein at least one of said epitaxiallayers includes a material from the group consisting of GaN, AlGaN, andInGaN.
 5. A curing light as recited in claim 1 wherein said well has areflective wall that includes a material selected from the groupconsisting of Al, Au, Ag, Zn, Cu, Pt, chrome, metal, plating andplastic, said well wall being capable of reflecting light of awavelength produced by said chip.
 6. A curing light as recited in claim1 wherein said semiconductor chip is selected from the group consistingof light emitting diode chips, laser chips, light emitting diode chiparray, diode laser chips, diode laser chip array, surface emitting laserchips, edge emitting laser chips, and VCSEL chips.
 7. A curing light asrecited in claim 1 wherein said chip is held in place in said well byuse of an adhesive selected from the group consisting of heat conductiveadhesive and light reflective adhesive.
 8. A curing light as recited inclaim 1 further comprising a secondary heat sink, said secondary heatsink being affixed to said heat sink, and said secondary heat sink beingcapable of assisting in dissipation of heat produced by said chip.
 9. Acuring light as recited in claim 1, further comprising a wand adapted tobe grasped by a human hand for applying light produced by the curinglight to a light curable material.
 10. A curing light as recited inclaim 9 further comprising a switch on said wand for initiating emissionof light from said semiconductor chip.
 11. A curing light as recited inclaim 1 further comprising a cover that provides protective covering forsaid semiconductor chip and which permits light emitted by saidsemiconductor chip to substantially pass through it.
 12. A curing lightas recited in claim 11 wherein said cover is selected from the groupconsisting of windows and focus lenses.
 13. A curing light as recited inclaim 8 wherein said secondary heat sink is elongate in shape.
 14. Acuring light comprising: a primary heat sink capable of dissipating heatcreated by a semiconductor light source, a well in said heat sink, saidwell being sized to receive a semiconductor chip capable of producinglight that is useful in curing light-curable materials, a top opening ofsaid well, a bottom of said well, a wall of said well, said wall of saidwell being capable of reflecting light, a semiconductor chip capable ofproducing light that is useful in curing light-curable materials, saidsemiconductor chip having a substrate, said substrate being selectedfrom the group consisting of Si, GaAs, GaN, InP, sapphire, SiC, GaSb,and InAs, said semiconductor chip having a plurality of epitaxiallayers, a contact layer as one of said epitaxial layers, said contactlayer serving to establish an electrical contact for said chip, acladding layer as one of said epitaxial layers, an active layer as oneof said epitaxial layers, said active layer serving to allow electronsjump from a conduction band to valance and emit energy which converts tolight, and a buffer layer as one of said epitaxial layers.
 15. A curinglight as recited in claim 14 wherein at least one of said epitaxiallayers includes a material from the group consisting of GaN, AlGaN, andInGaN.
 16. A curing light as recited in claim 14 wherein said well has areflective wall that includes a material selected from the groupconsisting of Al, Au, Ag, Zn, Cu, Pt, chrome, metal, plating andplastic, said well wall being capable of reflecting light of awavelength produced by said chip.
 17. A curing light as recited in claim14 wherein said chip is held in place in said well by use of an adhesiveselected from the group consisting of heat conductive adhesive and lightreflective adhesive.
 18. A curing light as recited in claim 14 furthercomprising a secondary heat sink, said secondary heat sink being affixedto said heat sink, and said secondary heat sink being capable ofassisting in dissipation of heat produced by said chip.
 19. A curinglight comprising: a housing for containing components of the curinglight, a handpiece of manipulation and applying light from the curinglight to a light-curable material, electronic circuitry for controllingthe curing light, a primary heat sink capable of dissipating heatcreated by a semiconductor light source, a semiconductor chip capable ofproducing light that is useful in curing light-curable materials, saidsemiconductor chip being affixed to said primary heat sink by use of anadhesive, said semiconductor chip having a substrate, said substratebeing selected from the group consisting of Si, GaAs, GaN, InP,sapphire, SiC, GaSb, and InAs, said semiconductor chip having aplurality of epitaxial layers, a contact layer as one of said epitaxiallayers, said contact layer serving to establish an electrical contactfor said chip, a cladding layer as one of said epitaxial layers, anactive layer as one of said epitaxial layers, said active layer servingto allow electrons jump from a conduction band to valance and emitenergy which converts to light, and a buffer layer as one of saidepitaxial layers; wherein at least one of said epitaxial layers includesa material from the group consisting of GaN, AlGaN, and InGaN.
 20. Acuring light as recited in claim 19 further comprising a secondary heatsink, said secondary heat sink being affixed to said heat sink, and saidsecondary heat sink being capable of assisting in dissipation of heatproduced by said chip.